EPSRC National Centre for III-V Technologies, Sheffield

Sheffield National Centre for III-V Semiconductors has approahed to Heriot Watt to host a short presentation by their Director, Peter Houston.  The abstract for the presentation is pasted below.  If you have an interest in semiconductors, whether it’s detailed physics or more device/fabrication oriented, then it would be a very good idea to attend this event.  Much has changed at the Sheffield Centre in recent years, so this is an efficient way to get an update.

We’ve scheduled his talk for 11.30am on Thursday, March 3rd in room DB130 – however, Peter will stay around for the rest of the day for discussions

The EPSRC National Centre for III-V Technologies

Prof Peter Houston

The University of Sheffield

The EPSRC National Centre for III-V Technologies at the Universities of Sheffield, Cambridge, Glasgow and Nottingham has recently been funded for a 5 year period from July 2010. Its remit is to provide collaborative access to world class expertise and facilities, thus enabling top-rate scientific research in the physical, engineering and biomedical sciences. This is achieved by the provision of state-of-the-art III-V epitaxial materials and characterization, advanced technologies for device fabrication, and the provision of custom opto-electronic and electronic devices. The new Facility is distributed, with Sheffield at the core, and is thus able to offer greatly enhanced research services to the UK academic community over that provided previously.

This presentation will describe how the Centre operates, the personnel involve and, importantly, the facilities and technologies available for collaboration through the normal EPSRC peer review process. Materials grown cover almost the full range of III-V binaries and their alloys including dilute nitrides and ferromagnetic semiconductors. Structures include quantum dots and wells, quantum cascade layers, strain balance technologies, microcavities and nanowires. Optoelectronic devices available from these materials and structures cover lasers, LEDs, SLEDs, photodetectors, APDs, VCSELs, optical modulators, SOAs, photonic crystals and solar cells. Electronic devices available include high-speed T-gate HEMTs, HBTs and III-V CMOS. The objective of the talk is to stimulate ideas and further discussion on how the Centre can move your research forward.